power management solution featuring Siliup SP20N02NJ N Channel MOSFET with 20V drain source voltage

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Product Description

Product Overview

The SP20N02NJ is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching speeds, low on-resistance, and is 100% tested for single pulse avalanche energy. This MOSFET is ideal for use in DC-DC converters and other power management circuits.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: N-Channel MOSFET
Device Code: 20N02
Package: PDFN3X3-8L

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			20		V
On-Resistance	RDS(on)TYP	@10V		2.2	m
		@4.5V		2.5	m
		@2.5V		3.2	mR
Continuous Drain Current	ID			80	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS			20	V
Gate-Source Voltage	VGSS			12	V
Continuous Drain Current	ID	(Tc=25C)		80	A
Pulse Drain Current	IDM	Tested		320	A
Single Pulse Avalanche Energy	EAS			700	mJ
Power Dissipation	PD	(Tc=25C)		85	W
Thermal Resistance Junction-to-Case	RJC			1.47	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	20	-	-	V
Drain-Source Leakage Current	IDSS	VDS=16V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=10V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	0.5	0.7	1.1	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=30A	-	2.2	3	m
		VGS= 4.5V, ID=20A	-	2.5	4
		VGS= 2.5V, ID=20A	-	3.2	4.5
Input Capacitance	Ciss	VDS=10V , VGS=0V , f=1MHz	-	5238	-	pF
Output Capacitance	Coss		-	932	-
Reverse Transfer Capacitance	Crss		-	833	-
Total Gate Charge	Qg	VDS=4.5V , VGS=10V , ID=40A	-	55	-	nC
Gate-Source Charge	Qgs		-	6.5	-
Gate-Drain Charge	Qg		-	2.8	-
Turn-On Delay Time	Td(on)	VDD=4.5V, VGS=10V , RG=3, ID=40A	-	8	-	nS
Rise Time	Tr		-	26	-
Turn-Off Delay Time	Td(off)		-	55	-
Fall Time	Tf		-	35	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Diode Continuous Current	IS		-	5	-	A
Package Information (PDFN3X3-8L)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	0.650	0.850	0.026	0.033
A1	0.152	REF.	0.006	REF.
A2	0~0.05		0~0.002
D	2.900	3.100	0.114	0.122
D1	2.300	2.600	0.091	0.102
E	2.900	3.100	0.114	0.122
E1	3.150	3.450	0.124	0.136
E2	1.535	1.935	0.060	0.076
b	0.200	0.400	0.008	0.016
e	0.550	0.750	0.022	0.030
L	0.300	0.500	0.012	0.020
L1	0.180	0.480	0.007	0.019
L2	0~0.100		0~0.004
L3	0~0.100		0~0.004
H	0.315	0.515	0.012	0.020
	9	13	9	13