Power Switching N Channel MOSFET Siliup SP010N70P8 100V Low Gate Charge and Low RDSon for UPS Systems
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Product Description
Product Overview
The SP010N70P8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, this MOSFET features fast switching, low gate charge, and low RDS(on). It is suitable for hard switched and high frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. The device is tested for 100% single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP010N70P8
- Channel Type: N-Channel
- Package Type: SOP-8L
- Device Code: 010N70
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 100 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 70 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 85 | m | ||
| Continuous Drain Current | ID | 4 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25,unless otherwise noted) | 4 | A | ||
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | 16 | A | ||
| Power Dissipation | PD | (Ta=25,unless otherwise noted) | 1.5 | W | ||
| Thermal Resistance (Junction-to-Ambient) | RJA | (Ta=25,unless otherwise noted) | 83 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=2A | - | 70 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | - | 85 | 110 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 1100 | - | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | - | 55 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | - | 40 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 12 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=3A | - | 2.9 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=3A | - | 1.8 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=3A | - | 3.9 | - | nS |
| Rise Time | Tr | VDD=50V VGS=10V , RG=3, ID=3A | - | 26 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=50V VGS=10V , RG=3, ID=3A | - | 16.2 | - | nS |
| Fall Time | Tf | VDD=50V VGS=10V , RG=3, ID=3A | - | 8.9 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP010N70P8 | SOP-8L | 4000 | ||||
| SOP-8L Dimensions (In Millimeters) | ||||||
| Symbol | Min. | Max. | ||||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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