General Purpose Transistor Siliup MMBT3906T2 PNP Silicon Type Featuring SOT23 Package for Switching

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Product Description

Product Overview

The MMBT3906T2 is a general-purpose PNP silicon transistor designed for switching applications. It offers a collector-emitter voltage of -45V and a collector current of -0.2A. This transistor is supplied in a SOT-23 package.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Type: General Purpose Transistor
Material: Silicon
Polarity: PNP
Package: SOT-23
Model Marking: MMBT3906T2

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Collector Base Voltage	VCBO		-50		V
Collector Emitter Voltage	VCEO		-45		V
Emitter Base Voltage	VEBO		-5		V
Collector Current	IC		-200		mA
Power Dissipation	Ptot			200	mW
Junction Temperature	Tj			150
Storage Temperature Range	Tstg		-55	+150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Collector-base breakdown voltage	BVCBO	IC=-100A ,IE=0	-50		V
Collector-emitter breakdown voltage	BVCEO	IC=-100A , IB=0	-45		V
Emitter-base breakdown voltage	BVEBO	IE=-100A,IC=0	-5		V
Collector cut-off current	ICBO	VCB=-50V, IE=0		-100	nA
Collector cut-off current	ICEO	VCE=-45V, IB=0		-100	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-100	nA
DC current gain	hFE	VCE=-1V, IC=-10mA	100	300
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-5mA		-1.1	V
Transition frequency	fT	VCE= -5V, IC=-10mA,f=30MHz		150	MHZ
SOT-23 Package Dimensions
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80	2.00
L		0.55 REF.
L1		0.30	0.50
		0	8