N Channel MOSFET Siliup SP40N06P8 with 40 volts drain source voltage and avalanche energy capability

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Product Description

Product Overview

The SP40N06P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for power switching applications, offering fast switching speeds, low gate charge, and low RDS(on) at various gate voltages (6m@10V, 9m@4.5V). It is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. The device features 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP40N06P8
Device Code: 40N06
Package: SOP-8L
Technology: N-Channel MOSFET

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Drain-Source Voltage	VDS				40	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				15	A
Pulsed Drain Current	IDM				60	A
Single pulsed avalanche energy	EAS			81	mJ
Power Dissipation	PD				3	W
Thermal Resistance Junction-to-Ambient	RJA			41.7	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=10A	-	6	9	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=8A	-	9	13	m
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	2450	-	pF
Output Capacitance	Coss		-	168	-	pF
Reverse Transfer Capacitance	Crss		-	135	-	pF
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=10A	-	45	-	nC
Gate-Source Charge	Qgs		-	11	-	nC
Gate-Drain Charge	Qg d		-	11	-	nC
Turn-On Delay Time	Td(on)	VDD=20V VGS=10V , RG=3, ID=10A	-	11	-	nS
Rise Time	Tr		-	29	-	nS
Turn-Off Delay Time	Td(off)		-	42	-	nS
Fall Time	Tf		-	7	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	15	A
Reverse Recovery Time	Trr	IS=10A, di/dt=100A/us, TJ=25	-	12	-	nS
Reverse Recovery Charge	Qrr		-	7	-	nC