Surface Mount 20V Dual P Channel MOSFET Siliup SP2006KDTL Featuring 2KV ESD Protection for Power Electronics

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2006KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Model: SP2006KDTL
Package: SOT-563
Device Code: 06K
Features: High power and current handling capability, Surface mount package, ESD protected 2KV
Applications: Battery Switch, DC/DC Converter

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-20			V
RDS(on)		@-4.5V		650		m
RDS(on)		@-2.5V		850		m
ID			-0.66			A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-20			V
Gate-Source Voltage	VGSS		12			V
Continuous Drain Current	ID		-0.66			A
Pulse Drain Current	IDM	Tested	-2.64			A
Power Dissipation	PD		150			mW
Thermal Resistance Junction-to-Ambient	RJA		833			C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20			V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V			10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.35	-0.65	-1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-500mA		650	750	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V , ID=-200mA		850	1000	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-10V , VGS=0V , f=1MHz		75		pF
Output Capacitance	Coss			20		pF
Reverse Transfer Capacitance	Crss			14		pF
Total Gate Charge	Qg	VDS=-10V , VGS=-4.5V , ID=-0.5A		1.25		nC
Gate-Source Charge	Qgs			0.35
Gate-Drain Charge	Qgd			0.27
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=3 , RL=2.5		5		nS
Turn-On Rise Time	tr			19
Turn-Off Delay Time	td(off)			15
Turn-Off Fall Time	tf			24
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-563)
Symbol	Dimensions In Millimeters	Min	Max
A		0.525	0.600
A1		0.000	0.050
e		0.450	0.550
c		0.090	0.160
D		1.500	1.700
b		0.170	0.270
E1		1.100	1.300
E		1.500	1.700
L		0.100	0.300
L1		0.200	0.400
	Ref.	7