100V Power MOSFET Siliup SP010N01BGHTO featuring N Channel design and advanced split gate trench technology

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Siliup Semiconductor Technology Co. Ltd. SP010N01BGHTO 100V N-Channel Power MOSFET

The SP010N01BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N01BGHTO
Channel Type: N-Channel
Package: TOLL
Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter	Symbol	Test Condition	Rating	Unit
Drain-Source Voltage	VDS		100	V
Gate-Source Voltage	VGS		20	V
Continuous Drain Current (Tc=25)	ID		370	A
Continuous Drain Current (Tc=100)	ID		247	A
Pulsed Drain Current	IDM		1480	A
Single Pulse Avalanche Energy	EAS		2304	mJ
Power Dissipation (Tc=25)	PD		410	W
Thermal Resistance Junction-to-Case	RJC		0.3	/W
Storage Temperature Range	TSTG		-55 to 150
Operating Junction Temperature Range	TJ		-55 to 150
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100 (Typ: 110)	V
Drain Cut-Off Current	IDSS	VDS=80V , VGS=0V , TJ=25	1 (Max)	A
Gate Leakage Current	IGSS	VGS=20V , VDS=0V	100 (Max)	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2 to 4 (Typ: 3)	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V , ID=125A	1.1 to 1.3 (Typ: 1.1)	m
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	14658 (Typ)	pF
Output Capacitance	Coss		2335 (Typ)	pF
Reverse Transfer Capacitance	Crss		39 (Typ)	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=125A	208 (Typ)	nC
Gate-Source Charge	Qgs		56 (Typ)	nC
Gate-Drain Charge	Qg d		37 (Typ)	nC
Turn-On Delay Time	td(on)	VDD=50V, VGS=10V , RG=1.6, ID=125A	25 (Typ)	nS
Rise Time	tr		75 (Typ)	nS
Turn-Off Delay Time	td(off)		89 (Typ)	nS
Fall Time	tf		29 (Typ)	nS
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	1.2 (Typ)	V
Maximum Body-Diode Continuous Current	IS		370	A
Reverse Recovery Time	Trr	IS=100A, di/dt=100A/us, TJ=25	92 (Typ)	nS
Reverse Recovery Charge	Qrr		302 (Typ)	nC