20V P Channel MOSFET Siliup SP2013T1 11A Continuous Drain Current SOT23 Package Surface Mount

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Product Description

Product Overview

The SP2013T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling capability, this surface mount device is suitable for applications such as battery switches and DC/DC converters. It features a SOT-23-3L package and offers robust performance characteristics.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2013T1
Package Type: SOT-23-3L
Circuit Diagram: Provided
Marking: 2013 (Device Code)

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-20	V
RDS(on) Typ		@-4.5V	13.5	m
RDS(on) Typ		@-2.5V	16	m
Continuous Drain Current	ID		-11	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-20	V
Gate-Source Voltage	VGSS		12	V
Continuous Drain Current	ID		-11	A
Pulse Drain Current	IDM	Tested	-44	A
Power Dissipation	PD		1.3	W
Thermal Resistance Junction-to-Ambient	RJA		96	C/W
Storage Temperature Range	TSTG		-55 to 150	C
Operating Junction Temperature Range	TJ		-55 to 150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20	V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.4 to -1.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-5A	13.5 to 17	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-2.5V , ID=-4A	16 to 25	m
Input Capacitance	Ciss	VDS=-10V , VGS=0V , f=1MHz	1800	pF
Output Capacitance	Coss		215	pF
Reverse Transfer Capacitance	Crss		176	pF
Total Gate Charge	Qg	VDS=-10V , VGS=-4.5V , ID=-7A	16	nC
Gate-Source Charge	Qgs		4.3	nC
Gate-Drain Charge	Qgd		3.6	nC
Turn-On Delay Time	td(on)	VDD=-6V VGS=-4.5V , RG=3, ID=-7A	8	nS
Turn-On Rise Time	tr		34	nS
Turn-Off Delay Time	td(off)		65	nS
Turn-Off Fall Time	tf		70	nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-1.2	V
Package Information (SOT-23-3L)
Symbol	Dimensions (mm)	Min.	Max.	Typ.
A		1.050	1.250
A1		0.000	0.100
A2		1.050	1.150
b		0.300	0.500
c		0.100	0.200
D		2.820	3.020
E		1.500	1.700
E1		2.650	2.950
e				0.950
e1				1.800 to 2.000
L		0.300	0.600
		0	8