Silicon Carbide MOSFET Siliup SP50N120CTF Featuring 1200V Blocking Voltage and Low Capacitances for Power Supplies
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Product Description
Product Overview
The SP50N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant and suitable for applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Certification: RoHS Compliant
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 1200 | V | |||
| Gate-Source Voltage | VGSMAX | -8/+22 | V | |||
| Recommended Gate-Source Voltage | VGSop | -4/+18 | V | |||
| Continuous Drain Current (Tc=25) | ID | 74 | A | |||
| Continuous Drain Current (Tc=100) | ID | 50 | A | |||
| Pulsed Drain Current | IDM | 150 | A | |||
| Single Pulse Avalanche Energy | EAS | 1805 | mJ | |||
| Power Dissipation (Tc=25) | PD | 312 | W | |||
| Power Dissipation (Tc=100) | PD | 156 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.51 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | - | 1 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=18V , VDS=0V, TJ=25 | - | 1 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =5mA, Tj=25 | 2.0 | 2.5 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =5mA, Tj=175 | - | 1.8 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=20A, Tj=25 | - | 35 | 45 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V , ID=20A, Tj=175 | - | 69 | - | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=1000V , VGS=0V , f=100KHz | - | 2975 | - | pF |
| Output Capacitance | Coss | - | 119 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=800V , VGS= -4/+18V , ID=40A | - | 117 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | ||
| Gate-Drain Charge | Qgd | - | 27 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDS=800V , VGS= -4/+18V , ID=40A RG=4.5 | - | 18 | - | ns |
| Rise Time | Tr | - | 21 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | ns | |
| Fall Time | Tf | - | 9 | - | ns | |
| Turn-On Energy | Eon | - | 485 | - | J | |
| Turn-Off Energy | Eoff | - | 75 | - | J | |
| Total Switching Loss | Etot | - | 253 | - | J | |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=-4V , ISD=20A , TJ=25 | - | 5 | - | V |
| Diode Forward Voltage | VSD | VGS=-4V , ISD=20A , TJ=175 | - | 4.4 | - | V |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=25C | - | 45 | - | A |
| Continuous Diode Forward Current | IS | VGS=-4V, Tc=100C | - | 25 | - | A |
| Reverse Recovery Time | trr | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/s | - | 19 | - | ns |
| Reverse Recovery Charge | Qrr | - | 500 | - | nC | |
| Peak Reverse Recovery Current | Irrm | - | 50 | - | A | |
| TO-247 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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