SP80N03BGHTD 80V N Channel MOSFET with Low Gate Charge and Avalanche Energy Testing in TO263 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP80N03BGHTD is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy, making it suitable for power switching applications, DC-DC converters, and uninterruptible power supplies. The MOSFET is available in the TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP80N03BGHTD
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| SP80N03BGHTD - 80V N-Channel Power MOSFET | ||||||
| Parameter | Symbol | Condition | Value | Unit | ||
| Product Summary | ||||||
| Breakdown Voltage (VBRDSS) | VBRDSS | - | 80 | V | ||
| On-Resistance (RDS(on) Typ) | RDS(on) | @10V | 3.5 | m | ||
| Continuous Drain Current (ID) | ID | - | 130 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | 80 | V | ||
| Gate-Source Voltage | VGSS | - | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 130 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 90 | A | ||
| Pulse Drain Current | IDM | Tested | 520 | A | ||
| Single Pulse Avalanche Energy | EAS | - | 576 | mJ | ||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 160 | W | ||
| Thermal Resistance Junction-to-Case | RJC | - | 0.78 | C/W | ||
| Maximum Junction Temperature | TJ | - | -55 to 150 | C | ||
| Storage Temperature Range | TSTG | - | -55 to 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 80 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 64V, VGS = 0V | - | 1 | uA | |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.9 | 4.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=40V, F=1MHz | - | 4360 | pF | |
| Output Capacitance | Coss | - | - | 500 | pF | |
| Reverse Transfer Capacitance | Crss | - | - | 26 | pF | |
| Total Gate Charge | Qg | VDS=40V, VGS=10V, ID=20A | - | 42 | nC | |
| Gate-Source Charge | Qgs | - | - | 15 | nC | |
| Gate-Drain Charge | Qgd | - | - | 20 | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=40V, ID=20A, VGS=10V, RG=3 | - | 17 | nS | |
| Rise Time | tr | - | - | 39 | nS | |
| Turn-Off Delay Time | td(off) | - | - | 64 | nS | |
| Fall Time | tf | - | - | 42 | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse Recovery Time | trr | IS=50 A,di/dt=100 A/sTJ=25 | - | 45 | nS | |
| Reverse Recovery Charge | Qrr | - | - | 56 | nC | |
| Package Information (TO-263) | ||||||
| Dimension Symbol | Millimeters (Min-Max) | Inches (Min-Max) | ||||
| A | 4.470 - 4.670 | 0.176 - 0.184 | ||||
| A1 | 0.000 - 0.150 | 0.000 - 0.006 | ||||
| B | 1.120 - 1.420 | 0.044 - 0.056 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.310 - 0.530 | 0.012 - 0.021 | ||||
| c1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| D | 10.010 - 10.310 | 0.394 - 0.406 | ||||
| E | 8.500 - 8.900 | 0.335 - 0.350 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| L | 14.940 - 15.500 | 0.588 - 0.610 | ||||
| L1 | 4.950 - 5.450 | 0.195 - 0.215 | ||||
| L2 | 2.340 - 2.740 | 0.092 - 0.108 | ||||
| L3 | 1.300 - 1.700 | 0.051 - 0.067 | ||||
| 0 - 8 | 0 - 8 | |||||
| V | 5.600 REF. | 0.220 REF. | ||||
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