100V N Channel MOSFET Siliup SP010N110GT8 suitable for surface mount power switching and converters
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010N110GT8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this MOSFET is suitable for surface mount applications. Key applications include battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N110GT8
- Channel Type: N-Channel
- Package Type: SOT-89
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) | @10V | 110 | m | |||
| ID | 3 | A | ||||
| RDS(on) | @4.5V | 160 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulse Drain Current | IDM | Tested | 12 | A | ||
| Power Dissipation | PD | 2.6 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 48 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=60V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =3A | - | 110 | 140 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =2A | - | 160 | 300 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 206 | - | pF |
| Output Capacitance | Coss | - | 29 | - | ||
| Reverse Transfer Capacitance | Crss | - | 1.4 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 4.3 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg | - | 1.1 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=2, ID=3A | - | 14.7 | - | nS |
| Turn-On Rise Time | tr | - | 3.5 | - | ||
| Turn-Off Delay Time | td(off) | - | 20.9 | - | ||
| Turn-Off Fall Time | tf | - | 2.7 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Outline (SOT-89) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.400 | 1.600 | ||||
| b | 0.320 | 0.520 | ||||
| b1 | 0.400 | 0.580 | ||||
| c | 0.350 | 0.440 | ||||
| D | 4.400 | 4.600 | ||||
| D1 | 1.550 | REF. | ||||
| D2 | 1.750 | REF. | ||||
| E | 2.300 | 2.600 | ||||
| E1 | 3.940 | 4.250 | ||||
| E2 | 1.900 | REF. | ||||
| e | 1.500 | TYP. | ||||
| e1 | 3.000 | TYP. | ||||
| L | 0.900 | 1.200 | ||||
| 45 | ||||||
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