Siliup SP40N03AGNK Power MOSFET 40V N Channel optimized for DC DC converters and PWM applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N03AGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N03AGNK
- Device Code: 40N03AG
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 40 | V | |
| RDS(on) Typical | RDS(on)TYP | 2.7 | m@10V | |
| RDS(on) Typical | RDS(on)TYP | 3.2 | m@4.5V | |
| Continuous Drain Current | ID | 110 | A | |
| Drain-Source Voltage | VDS | 40 | V | (Ta=25unless otherwise noted) |
| Gate-Source Voltage | VGS | 20 | V | (Ta=25unless otherwise noted) |
| Continuous Drain Current (Tc=25 | ID | 110 | A | (Ta=25unless otherwise noted) |
| Continuous Drain Current (Tc=100) | ID | 75 | A | (Ta=25unless otherwise noted) |
| Pulsed Drain Current | IDM | 440 | A | (Ta=25unless otherwise noted) |
| Single Pulse Avalanche Energy | EAS | 196 | mJ | (Ta=25unless otherwise noted) |
| Power Dissipation (Tc=25 | PD | 70 | W | (Ta=25unless otherwise noted) |
| Thermal Resistance Junction-to-Case | RJC | 1.79 | /W | (Ta=25unless otherwise noted) |
| Storage Temperature Range | TSTG | -55 to 150 | (Ta=25unless otherwise noted) | |
| Operating Junction Temperature Range | TJ | -55 to 150 | (Ta=25unless otherwise noted) | |
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V , ID=250uA |
| Drain Cut-Off Current | IDSS | 1 | uA | VDS=32V , VGS=0V , TJ=25 |
| Gate Leakage Current | IGSS | 100 | nA | VGS=20V , VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.0 to 2.5 | V | VGS=VDS , ID =250uA |
| Drain-Source ON Resistance | RDS(ON) | 2.7 to 3.5 | m | VGS=10V , ID=20A |
| Drain-Source ON Resistance | RDS(ON) | 3.2 to 4.3 | m | VGS=4.5V , ID=10A |
| Input Capacitance | Ciss | 1965 | pF | VDS=20V , VGS=0V , f=1MHz |
| Output Capacitance | Coss | 425 | pF | VDS=20V , VGS=0V , f=1MHz |
| Reverse Transfer Capacitance | Crss | 37 | pF | VDS=20V , VGS=0V , f=1MHz |
| Total Gate Charge | Qg | 57 | nC | VDS=20V , VGS=10V , ID=85A |
| Gate-Source Charge | Qgs | 9.5 | - | VDS=20V , VGS=10V , ID=85A |
| Gate-Drain Charge | Qg d | 11 | - | VDS=20V , VGS=10V , ID=85A |
| Turn-On Delay Time | td(on) | 10 | nS | VDD=20V, VGS=10V, RG=1.6, ID=85A |
| Rise Time | tr | 3 | nS | VDD=20V, VGS=10V, RG=1.6, ID=85A |
| Turn-Off Delay Time | td(off) | 35 | nS | VDD=20V, VGS=10V, RG=1.6, ID=85A |
| Fall Time | tf | 4 | nS | VDD=20V, VGS=10V, RG=1.6, ID=85A |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 110 | A | |
| Reverse Recovery Time | Trr | 37 | nS | IS=20A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 12 | nC | IS=20A, di/dt=100A/us, TJ=25 |
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N03AGNK | PDFN5X6-8L | 5000 |
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