Power Management MOSFET Siliup SP010N60GDNK 100V Dual N Channel Device with 14A Drain Current Rating
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Product Description
Product Overview
The SP010N60GDNK is a 100V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., featuring advanced split gate trench technology for fast switching speeds and reliable, rugged performance. It is designed for power management functions, industrial and motor drive applications, and DC-DC converters. This MOSFET offers a continuous drain current of 14A at 25 and 10A at 100, with a low on-resistance of 60m at 10V and 70m at 4.5V. It is tested for 100% single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5x6-8L
- Device Code: 010N60GD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on)TYP | @10V | 60 | m | |||
| RDS(on)TYP | @4.5V | 70 | m | |||
| ID | 14 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 14 | A | |||
| Continuous Drain Current (Tc=100) | ID | 10 | A | |||
| Pulsed Drain Current | IDM | 56 | A | |||
| Single Pulse Avalanche Energy | EAS | 9.8 | mJ | |||
| Power Dissipation (Tc=25) | PD | 47.8 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.6 | /W | |||
| Storage Temperature Range | TSTG | -50 | 150 | |||
| Operating Junction Temperature Range | TJ | -50 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | V | ||
| Drain Cut-Off Current | IDSS | VDS=100V , VGS=0V | 1 | uA | ||
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=6A | 60 | 75 | m | |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V , ID=4A | 70 | 95 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | 345 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 9.8 | pF | |||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=5.0A | 6.1 | nC | ||
| Gate-Source Charge | Qgs | 1.7 | nC | |||
| Gate-Drain Charge | Qg d | 1.5 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V, ID=5.0A, RGEN=2 | 8.8 | nS | ||
| Rise Time | tr | 3.7 | nS | |||
| Turn-Off Delay Time | td(off) | 19 | nS | |||
| Fall Time | tf | 7.5 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 10 | A | |||
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | 16 | nS | ||
| Reverse Recovery Charge | Qrr | 18 | nC | |||
| Package Information (PDFN5x6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | ||
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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