Power MOSFET 100V N Channel Siliup SP010N07AGTQ with Fast Switching Low Gate Charge and TO220 Package
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010N07AGTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N07AGTQ
- Technology: Advanced Split Gate Trench Technology
- Package: TO-220-3L-C(1:G 2:D 3:S)
- Marking: 010N07AG
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on) | - | 10V | - | 6.7 | - | m |
| RDS(on) | - | 4.5V | - | 8.7 | - | m |
| ID | - | - | - | - | 90 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 90 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 60 | A |
| Pulsed Drain Current | IDM | - | - | - | 360 | A |
| Single Pulse Avalanche Energy | EAS | VDD=50V,VGS=10V,L=0.5mH,RG=25 | - | - | 272 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 130 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 0.96 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 6.7 | 8.5 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 25A | - | 8.7 | 12 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1942 | - | pF |
| Output Capacitance | Coss | - | - | 388 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 12 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 67 | - | nC |
| Gate-Source Charge | Qgs | - | - | 12 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 21 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 50V, VDS =50V, ID=50A RG = 4.7 | - | 12 | - | nS |
| Rise Time | tr | - | - | 11 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 42 | - | nS |
| Fall Time | tf | - | - | 6 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 90 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 59 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 88 | - | nC |
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