Siliup SP40N01GTH 40V N Channel MOSFET Offering Fast Switching Low RDS on and High Frequency Circuit
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N01GTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This device is ideal for PWM applications, hard-switched and high-frequency circuits, and power management solutions. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N01GTH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | 10V | 1.7 | 2.2 | m | |
| RDS(on)TYP | RDS(on) | 4.5V | 2.2 | 3 | m | |
| ID | ID | 140 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | Tc=25 | 140 | A | ||
| Continuous Drain Current (Tc=100) | ID | Tc=100 | 95 | A | ||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy | EAS | 1089 | mJ | |||
| Power Dissipation (Tc=25) | PD | Tc=25 | 145 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.4 | 1.9 | 2.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.7 | 2.2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=50A | - | 2.2 | 3 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5500 | - | pF |
| Output Capacitance | Coss | - | 1850 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 65 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 128 | - | nC |
| Gate-Source Charge | Qgs | - | 19 | - | nC | |
| Gate-Drain Charge | Qgd | - | 12 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 13.5 | - | nS |
| Rise Time | Tr | - | 8.8 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 55 | - | nS |
| Reverse Recovery Charge | Qrr | - | 53 | - | nC | |
Package Information
Package: TO-252
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N01GTH | TO-252 | 2500 |
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