60V N Channel Power MOSFET Siliup SP60N08GTH Featuring Low RDSon and Split Gate Trench Technology for Switching

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP60N08GTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), achieved through advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP60N08GTH
Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
RDS(on)TYP		@10V		7.5		m
RDS(on)TYP		@4.5V		10		m
Continuous Drain Current	ID				68	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS				60	V
Gate-Source Voltage	VGSS				20	V
Continuous Drain Current (Tc=25C)	ID				68	A
Continuous Drain Current (Tc=100C)	ID				45	A
Pulse Drain Current	IDM	Tested			272	A
Single Pulse Avalanche Energy	EAS				182	mJ
Power Dissipation (Tc=25C)	PD				68	W
Thermal Resistance Junction-to-Case	RJC				1.84	C/W
Maximum Junction Temperature	TJ		-55		150	C
Storage Temperature Range	TSTG		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250mA	60	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=48V, VGS=0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS=20V, VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250uA	1	1.5	2.5	V
Drain-Source On-state Resistance	RDS(ON)	VGS=10V, ID=20A	-	7.5	10	m
Drain-Source On-state Resistance	RDS(ON)	VGS=4.5V, ID=10A	-	10	13	m
Dynamic Characteristics
Input Capacitance	Ciss	VGS=0V, VDS=30V, F=1MHz	-	1350	-	pF
Output Capacitance	Coss		-	310	-	pF
Reverse Transfer Capacitance	Crss		-	25	-	pF
Total Gate Charge	Qg	VDS=30V, VGS=10V, ID=20A	-	27.9	-	nC
Gate-Source Charge	Qgs		-	7.8	-	nC
Gate-Drain Charge	Qg d		-	6.2	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=30V, ID=20A, VGS=10V, RG=4.7	-	14	-	nS
Rise Time	tr		-	26	-	nS
Turn-Off Delay Time	td(off)		-	33.8	-	nS
Fall Time	tf		-	26.4	-	nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	68	A
Reverse Recovery Time	Trr	IS=30 A, di/dt=100 A/sTJ=25	-	36	-	nS
Reverse Recovery Charge	Qrr		-	23	-	nC
Package Information
Package Type					TO-252
Pin Configuration		(1:G 2:D 3:S)
Marking		60N08G : Product code, ** : Week code
Order Information	Device	Package	Unit/Tape
	SP60N08GTH	TO-252	2500
TO-252 Package Dimensions (Dimensions in Millimeters)
Symbol	Min.	Max.	Symbol	Min.	Max.
A	2.200	2.400	A1	0.000	0.127
b	0.660	0.860	c	0.460	0.580
D	6.500	6.700	D1	5.100	5.460
D2	4.830 REF.		E	6.000	6.200
e	2.186	2.386	L	9.800	10.400
L1	2.900 REF.		L2	1.400	1.700
L3	1.600 REF.		L4	0.600	1.000
	1.100	1.300		0	8
h	0.000	0.300	V	5.350 REF.