N Channel 30V MOSFET Siliup SP30N01AAGTO Featuring Fast Switching Low RDS on and Single Pulse Avalanche Energy Test
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Product Description
Product Overview
The SP30N01AAGTO is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N01AAGTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Channel Type: N-Channel
- Certifications: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) Typ. | RDS(on)TYP | @10V | 0.55 | m | ||
| RDS(on) Typ. | RDS(on)TYP | @4.5V | 0.7 | m | ||
| Continuous Drain Current | ID | 330 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 330 | A | |||
| Continuous Drain Current (Tc=100) | ID | 220 | A | |||
| Pulsed Drain Current | IDM | 1320 | A | |||
| Single Pulse Avalanche Energy | EAS | 1369 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | 35 | V | |
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V, TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=50A | 0.55 | 0.68 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=50A | 0.7 | 1 | m | |
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | 6800 | pF | ||
| Output Capacitance | Coss | 3300 | pF | |||
| Reverse Transfer Capacitance | Crss | 125 | pF | |||
| Total Gate Charge | Qg | VDS=20V, VGS=10V, ID=85A | 116 | nC | ||
| Gate-Source Charge | Qgs | 52 | nC | |||
| Gate-Drain Charge | Qg d | 16 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | 5.5 | nS | ||
| Rise Time | Tr | 19.6 | nS | |||
| Turn-Off Delay Time | Td(off) | 126 | nS | |||
| Fall Time | Tf | 56 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 330 | A | |||
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 78 | nS | ||
| Reverse Recovery Charge | Qrr | 102 | nC | |||
| TOLL Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Dimensions | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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