Siliup SP12N65TG 650V N Channel Planar MOSFET Designed for Power Switching and Low Rdson Performance
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Product Description
Product Overview
The SP12N65TG is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP12N65TG
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | |
| Gate-Source Voltage | VGS | 30 | V | |
| Continuous Drain Current (Tc=25) | ID | 12 | A | |
| Continuous Drain Current (Tc=100) | ID | 8 | A | |
| Pulsed Drain Current | IDM | 48 | A | |
| Single Pulse Avalanche Energy | EAS | 605 | mJ | 1 |
| Power Dissipation (Tc=25) | PD | 40 | W | |
| Thermal Resistance Junction-to-Case | RJC | 3.1 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID = 250A, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | A | VDS = 520V, VGS = 0V |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 to 4.0 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | 0.6 to 0.75 | VGS = 10V, ID = 6A | |
| Input Capacitance | Ciss | 1905 | pF | VDS =25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 139 | pF | |
| Reverse Transfer Capacitance | Crss | 9 | pF | |
| Total Gate Charge | Qg | 43 | nC | VDS=500V , VGS=10V , ID=12A |
| Gate-Source Charge | Qgs | 9 | nC | |
| Gate-Drain Charge | Qg d | 15 | nC | |
| Turn-On Delay Time | td(on) | 25 | nS | VDD=325V , VGS=10V , RG=10, ID=10A |
| Rise Time | tr | 39 | nS | |
| Turn-Off Delay Time | td(off) | 52 | nS | |
| Fall Time | tf | 41 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 12 | A | |
| Body Diode Reverse Recovery Time | Trr | 116 | nS | IS = 12A, dIF/dt = 100A/us |
| Body Diode Reverse Recovery Charge | Qrr | 10.4 | uC |
Note: 1. The test condition is VDD=50V,VGS=10V,L=10mH,RG=30;
Package Information (TO-220F):
| Symbol | Dimensions (Millimeters) | ||
|---|---|---|---|
| Min. | Max. | REF. | |
| A | 4.300 | 4.700 | |
| A1 | 1.300 | ||
| A2 | 2.800 | 3.200 | |
| A3 | 2.500 | 2.900 | |
| b | 0.500 | 0.750 | |
| b1 | 1.100 | 1.350 | |
| b2 | 1.500 | 1.750 | |
| c | 0.500 | 0.750 | |
| D | 9.960 | 10.360 | |
| E | 14.800 | 15.200 | |
| e | 2.540 TYP. | ||
| F | 2.700 REF. | ||
| 3.500 REF. | |||
| h | 0.000 | 0.300 | |
| h1 | 0.800 REF. | ||
| h2 | 0.500 REF. | ||
| L | 28.000 | 28.400 | |
| L1 | 1.700 | 1.900 | |
| L2 | 0.900 | 1.100 |
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