Siliup SP010P09GHTO P Channel 100V MOSFET Featuring Low RDSon and Avalanche Energy Testing for Switching
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Delivery Time:
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Product Description
Product Overview
The SP010P09GHTO is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P09GHTO
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Channel Type: P-Channel
- Voltage Rating: 100V
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -100 | V | |||
| RDS(on) | RDS(on) | @-10V | 9 | m | ||
| Continuous Drain Current | ID | -150 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -150 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -100 | A | ||
| Pulsed Drain Current | IDM | -600 | A | |||
| Single Pulse Avalanche Energy | EAS | 1025 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 290 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.43 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID= -250uA | -100 | -110 | V | |
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | - | -1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID = -250uA | -2 | -3 | -4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID= -20A | 9 | 11 | m | |
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 13600 | pF | ||
| Output Capacitance | Coss | 1200 | pF | |||
| Reverse Transfer Capacitance | Crss | 26 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=10V , ID=-20A | 168 | nC | ||
| Gate-Source Charge | Qgs | 46 | nC | |||
| Gate-Drain Charge | Qgd | 23 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-50V , VGS=10V , RG=1.6,ID=-20A | 16 | nS | ||
| Rise Time | Tr | 58 | nS | |||
| Turn-Off Delay Time | Td(off) | 145 | nS | |||
| Fall Time | Tf | 56 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | -150 | A | ||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 96 | nS | ||
| Reverse Recovery Charge | Qrr | 205 | nC | |||
| TOLL Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Dimensions | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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