Power Switching MOSFET Siliup SP40N03P8 40V N Channel Device with Low Gate Charge and Fast Switching
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Product Description
Product Overview
The SP40N03P8 is a 40V N-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at various gate voltages, making it suitable for power switching applications, hard switched, and high-frequency circuits, including Uninterruptible Power Supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N03P8
- Channel Type: N-Channel MOSFET
- Package: SOP-8L
- Marking: 40N03 (Device Code)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) Typ. | @10V | 3.6 | m | |||
| RDS(on) Typ. | @4.5V | 4.8 | m | |||
| Continuous Drain Current | ID | 21 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 21 | A | |||
| Pulsed Drain Current | IDM | 84 | A | |||
| Single Pulse Avalanche Energy | EAS | 160 | mJ | |||
| Power Dissipation | PD | 3.1 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 40.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 3.6 | 5.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 4.8 | 8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5000 | - | pF |
| Output Capacitance | Coss | - | 890 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 350 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | ||
| Gate-Drain Charge | Qgd | - | 17 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V ,VGS=10V , RG=3, ID=2A | - | 15 | - | nS |
| Rise Time | Tr | - | 18 | - | ||
| Turn-Off Delay Time | Td(off) | - | 52 | - | ||
| Fall Time | Tf | - | 23 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 21 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 24 | - | nS |
| Reverse Recovery Charge | Qrr | - | 15 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (Pitch) | 1.27 REF. | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| (Lead Angle) | 0 | 8 | ||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP40N03P8 | SOP-8L | 4000 | ||||
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