Power Management MOSFET Siliup SP40P25NJ 40V P Channel with Fast Switching Speed and Low On Resistance
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Product Description
Product Overview
The SP40P25NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% Single Pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC Converters and Power Management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40P25NJ
- Package: PDFN3X3-8L
- Device Code: 40P25
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |
| On-Resistance (Typical) | RDS(on)TYP | @-10V | 25 | m |
| On-Resistance (Typical) | RDS(on)TYP | @-4.5V | 35 | m |
| Continuous Drain Current | ID | -16 | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -40 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (Tc=25C) | ID | -16 | A | |
| Continuous Drain Current (Tc=100C) | ID | -11 | A | |
| Pulse Drain Current Tested | IDM | -64 | A | |
| Single Pulse Avalanche Energy | EAS | 60 | mJ | |
| Power Dissipation (Tc=25C) | PD | 28 | W | |
| Thermal Resistance Junction-to-Case | RJC | 4.5 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 to -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 25 to 35 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 35 to 50 | m |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 1415 | pF |
| Output Capacitance | Coss | 134 | pF | |
| Reverse Transfer Capacitance | Crss | 102 | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 23.5 | nC |
| Gate-Source Charge | Qgs | 3.5 | nC | |
| Gate-Drain Charge | Qg d | 3.3 | nC | |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-6A | 11 | nS |
| Rise Time | Tr | 15.7 | nS | |
| Turn-Off Delay Time | Td(off) | 35 | nS | |
| Fall Time | Tf | 5.5 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | -16 | A | |
| Reverse recover time | Trr | IS=-15A, di/dt=-100A/us, Tj=25 | 28 | nS |
| Reverse recovery charge | Qrr | 36 | nC | |
| Package Information (Dimensions in Millimeters) | ||||
| Symbol | Dimensions Min. | Dimensions Max. | Dimensions Min. (Inches) | Dimensions Max. (Inches) |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
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