Low RDSon P Channel MOSFET Siliup SP30P16P8 30 Volt Device Suitable for High Frequency Power Switching

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Product Description

Product Overview

The SP30P16P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low R_DS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. It is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 30P16
Package: SOP-8L

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Product Summary
V(BR)DSS	V(BR)DSS		-30			V
RDS(on)TYP	RDS(on)TYP	@-10V		16		m
		@-4.5V		21		m
ID	ID		-9			A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDS		-30			V
Gate-Source Voltage	VGS		20			V
Continuous Drain Current	ID		-9			A
Pulsed Drain Current	IDM		-36			A
Single Pulse Avalanche Energy¹	EAS			7.2		mJ
Power Dissipation	PD			2		W
Thermal Resistance Junction-to-Ambient	RJA			62.5		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-30			V
Drain-Source Leakage Current	IDSS	VDS=-24V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0	-1.5	-2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-6A		16	25	m
		VGS=-4.5V , ID=-4A		21	34	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-15V , VGS=0V , f=1MHz		1360		pF
Output Capacitance	Coss			250		pF
Reverse Transfer Capacitance	Crss			200		pF
Total Gate Charge	Qg	VDS=-15V , VGS=-10V , ID=-10A		30		nC
Gate-Source Charge	Qgs			3.5
Gate-Drain Charge	Qgd			9.2
Switching Characteristics
Turn-On Delay Time	Td(on)	VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A		9		nS
Rise Time	Tr			11
Turn-Off Delay Time	Td(off)			23
Fall Time	Tf			10
Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A			-1.2	V
Maximum Body-Diode Continuous Current	IS				-9	A
Reverse recover time	Trr	IS=-10A, di/dt=100A/us, Tj=25		23		nS
Reverse recovery charge	Qrr			15		nC
Package Information (SOP-8L)
Symbol	Dimensions In Millimeters	Min.	Max.
A		1.35	1.75
A1		0.10	0.25
A2		1.35	1.55
b		0.33	0.51
c		0.17	0.25
D		4.80	5.00
e		1.27 REF.
E		5.80	6.20
E1		3.80	4.00
L		0.40	1.27
		0	8