Low RDSon 60V N Channel MOSFET Siliup SP60N03GHTH Designed for Fast Switching and Power Switching Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N03GHTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 60N03GH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
- Origin: Siliup Semiconductor Technology Co. Ltd.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 3.7 | m | |||
| ID | 110 | A | ||||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 110 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 75 | A | |||
| Pulse Drain Current Tested | IDM | 440 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 784 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 110 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 2 | 2.5 | 4 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 3.7 | 4.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 4250 | - | pF |
| Output Capacitance | Coss | - | 975 | - | ||
| Reverse Transfer Capacitance | Crss | - | 41 | - | ||
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | ||
| Gate-Drain Charge | Qgd | - | 10 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=3 | - | 13.5 | - | nS |
| Rise Time | tr | - | 96 | - | ||
| Turn-Off Delay Time | td(off) | - | 40 | - | ||
| Fall Time | tf | - | 115 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | trr | IS=60 A,di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 30 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
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