100V N Channel Power MOSFET Siliup SP010N01BGHTF with High Pulsed Drain Current and Low Gate Charge
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010N01BGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01BGHTF
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | Package Limit | 275 | A | ||
| Continuous Drain Current (Tc=100) | ID | 183 | A | |||
| Pulsed Drain Current | IDM | 1100 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 2601 | mJ | |||
| Power Dissipation (Tc=25) | PD | 340 | W | |||
| Power Dissipation (Tc=100) | PD | 136 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.37 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | µA |
| Gate Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250µA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.35 | 1.75 | mΩ |
| Gate Resistance | RG | VDS=50V , VGS=0V , f=1MHz | - | 4.1 | - | Ω |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 12142 | - | pF |
| Output Capacitance | Coss | - | 4588 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 129 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 218 | - | nC |
| Gate-Source Charge | Qgs | - | 66 | - | nC | |
| Gate-Drain Charge | Qgd | - | 57 | - | nC | |
| Gate Plateau Voltage | Vplateau | - | 5 | - | V | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V , VGS=10V , RG=1.6Ω , ID=125A | - | 43 | - | nS |
| Rise Time | tr | - | 71 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 149 | - | nS | |
| Fall Time | tf | - | 89 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS=1A , VGS=0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 275 | A | |
| Reverse Recovery Time | Trr | IS=20A , di/dt=100A/µs , TJ=25°C | - | 136 | - | nS |
| Reverse Recovery Charge | Qrr | - | 380 | - | nC | |
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25Ω
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP010N01BGHTF | TO-247 | 30 |
TO-247 Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| Φ | 7.100 | 7.300 | 0.280 | 0.287 |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Soldering Information
Temperature Profile for IR Reflow Soldering (Pb-Free):
- Preheating: 25 ~ 150 , Time: 60 ~ 90 sec.
- Peak Temp.: 245 ± 5 , Duration: 5 ± 0.5 sec.
- Cooling Speed: 2 ~ 10 /sec.
Resistance to Soldering Heat Test Conditions:
- Temp.: 260 ± 5
- Time: 10 ± 1 sec.
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