60V N Channel Power MOSFET Siliup SP60N01BGMT designed for PWM and high frequency power management systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N01BGMT is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for high-performance applications. It features fast switching, low gate charge, and low Rdson, utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N01BGMT
- Package: sTOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on)TYP | @10V | 1.15 | m | |||
| RDS(on)TYP | @4.5V | 1.5 | m | |||
| ID | 340 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 340 | A | |||
| Continuous Drain Current (Tc=100) | ID | 227 | A | |||
| Pulsed Drain Current | IDM | 1360 | A | |||
| Single Pulse Avalanche Energy | EAS | 1488 | mJ | |||
| Total Power Dissipation (Tc=25) | PD | 360 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.35 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 1.15 | 1.45 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=50A | - | 1.5 | 2 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 7820 | - | pF |
| Output Capacitance | Coss | - | 2170 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 88 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 138 | - | nC |
| Gate-Source Charge | Qgs | - | 39 | - | nC | |
| Gate-Drain Charge | Qg | - | 32 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=1.6, ID=85A | - | 18 | - | nS |
| Rise Time | Tr | - | 72 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 108 | - | nS | |
| Fall Time | Tf | - | 78 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 340 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Reverse Recovery Charge | Qrr | - | 53 | - | nC | |
| Package Information (sTOLL) | ||||||
| Symbol | Dimensions (mm) MIN | Dimensions (mm) NOM | Dimensions (mm) MAX | |||
| A | 2.262 | 2.300 | 2.338 | |||
| A3 | 0.492 | 0.500 | 0.508 | |||
| D | 7.950 | 8.000 | 8.050 | |||
| D5 | 6.650 | 6.700 | 6.750 | |||
| E | 6.950 | 7.000 | 7.050 | |||
| e | 1.30 | BCS | ||||
| e1 | 1.60 | BCS | ||||
| D1 | 0.130 | ref | ||||
| D2 | 5.150 | 5.200 | 5.250 | |||
| D3 | 2.520 | 2.570 | 2.620 | |||
| D4 | 2.450 | 2.500 | 2.550 | |||
| b | 0.750 | 0.800 | 0.850 | |||
| b1 | 0.350 | ref | ||||
| b2 | 0.350 | 0.450 | 0.550 | |||
| b3 | 0.400 | 0.425 | 0.450 | |||
| b4 | 1.100 | 1.200 | 1.300 | |||
| b5 | 1.550 | 1.650 | 1.750 | |||
| L | 1.100 | 1.150 | 1.200 | |||
| L1 | 0.650 | 0.700 | 0.750 | |||
| L2 | 0.550 | 0.600 | 0.650 | |||
| L3 | 0.850 | 0.900 | 0.950 | |||
| L4 | 0.185 | 0.235 | 0.285 | |||
| E1 | 6.850 | 6.900 | 6.950 | |||
| E2 | 5.910 | 5.960 | 6.010 | |||
| E3 | 5.610 | 5.660 | 5.710 | |||
| E4 | 6.510 | 6.560 | 6.610 | |||
| K1 | 2.430 | ref | ||||
| K2 | 1.970 | ref | ||||
| K3 | 2.275 | 2.300 | 2.325 | |||
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