N Channel 100V Power MOSFET Featuring Low RDSon and Fast Switching Siliup SP010N01BLGHTO Suitable for High Frequency
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Product Description
Product Overview
The SP010N01BLGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N01BLGHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | |
|---|---|---|---|---|---|
| Product Summary | |||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | ||
| RDS(on) (Typ) | RDS(on) | @10V | 1.3 | m | |
| Continuous Drain Current | ID | 350 | A | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | |
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | |
| Continuous Drain Current | ID | (Tc=25) | 350 | A | |
| Continuous Drain Current | ID | (Tc=100) | 235 | A | |
| Pulsed Drain Current | IDM | 1400 | A | ||
| Single Pulse Avalanche Energy | EAS | 2116 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 370 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.34 | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 (Typ 110) | V | |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - (Max 1) | A | |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - (Max 100) | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 (Typ 3) (Max 4) | V | |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - (Typ 1.3) (Max 1.6) | m | |
| Dynamic Characteristics | |||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - (Typ 14071) | pF | |
| Output Capacitance | Coss | - (Typ 2241) | pF | ||
| Reverse Transfer Capacitance | Crss | - (Typ 37) | pF | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - (Typ 200) | nC | |
| Gate-Source Charge | Qgs | - (Typ 54) | |||
| Gate-Drain Charge | Qgd | - (Typ 35) | |||
| Switching Characteristics | |||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | - (Typ 24) | nS | |
| Rise Time | tr | - (Typ 73) | |||
| Turn-Off Delay Time | td(off) | - (Typ 86) | |||
| Fall Time | tf | - (Typ 27) | |||
| Drain-Source Body Diode Characteristics | |||||
| Source-Drain Diode Forward Voltage | VSD | IS =1A, VGS =0V | - (Typ 1.2) | V | |
| Maximum Body-Diode Continuous Current | IS | - (Typ 350) | A | ||
| Reverse Recovery Time | trr | IS=100A, di/dt=100A/us, TJ=25 | - (Typ 90) | nS | |
| Reverse Recovery Charge | Qrr | - (Typ 289) | nC | ||
| Package Information (TOLL) | |||||
| Dimension Symbol | Min. | Nom. | Max. | Unit | |
| A | 2.20 | 2.30 | 2.40 | ||
| b | 0.65 | 0.75 | 0.85 | ||
| C | 0.508 | REF | |||
| D | 10.25 | 10.40 | 10.55 | ||
| D1 | 2.85 | 3.00 | 3.15 | ||
| E | 9.75 | 9.90 | 10.05 | ||
| E1 | 9.65 | 9.80 | 9.95 | ||
| E2 | 8.95 | 9.10 | 9.25 | ||
| E3 | 7.25 | 7.40 | 7.55 | ||
| e | 1.20 BSC | ||||
| F | 1.05 | 1.20 | 1.35 | ||
| H | 11.55 | 11.70 | 11.85 | ||
| H1 | 6.03 | 6.18 | 6.33 | ||
| H2 | 6.85 | 7.00 | 7.15 | ||
| H3 | 3.00 BSC | ||||
| L | 1.55 | 1.70 | 1.85 | ||
| L1 | 0.55 | 0.7 | 0.85 | ||
| L2 | 0.45 | 0.6 | 0.75 | ||
| M | 0.08 REF. | ||||
| 8 | 10 | 12 | |||
| K | 4.25 | 4.40 | 4.55 | ||
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