Power MOSFET Siliup SP60P03GHTD 60V P Channel with Low Gate Charge and High Avalanche Energy Capability
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Product Description
Product Overview
The SP60P03GHTD is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P03GHTD
- Technology: Advanced Split Gate Trench Technology
- Channel Type: P-Channel
- Package: TO-263
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) Typical | RDS(on)TYP | @-10V | 3.5 | m | ||
| Continuous Drain Current | ID | -200 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -200 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -134 | A | ||
| Pulsed Drain Current | IDM | -800 | A | |||
| Power Dissipation | PD | (Tc=25) | 145 | W | ||
| Single Pulsed Avalanche Energy | EAS | (Tested at starting Tj = 25, VDD=-50V,VGS = -10V,L = 0.5mH, Rg=25m) | 1722 | mJ | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.86 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-48V,VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V,VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.5 | -2.5 | -3.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V, ID=-20A | 3.5 | 4.5 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-30V, VGS =0V, f = 1MHz | 5670 | pF | ||
| Output Capacitance | Coss | 1060 | pF | |||
| Reverse Transfer Capacitance | Crss | 78 | pF | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS= -30V, ID= -70A, VGS= -10V | 82 | nC | ||
| Gate-Source Charge | Qgs | 26 | ||||
| Gate-Drain Charge | Qg | 18 | ||||
| Turn-On Delay Time | td(on) | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | 20 | ns | ||
| Rise Time | tr | 58 | ||||
| Turn-Off Delay Time | td(off) | 145 | ||||
| Fall Time | tf | 168 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS =-1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -130 | A | |||
| Reverse Recovery Time | Trr | IS=-50A, di/dt=-100A/us, TJ=25 | 65 | ns | ||
| Reverse Recovery Charge | Qrr | 116 | nC | |||
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
Applications
- Power switching application
- DC-DC Converter
- Power Management
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60P03GHTD | TO-263 | 800 |
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