power switching solution Siliup SP020N08GHTD N Channel MOSFET with excellent avalanche energy rating
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP020N08GHTD is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for high-speed power switching applications, including DC-DC converters and power management systems. Key features include fast switching speeds, low gate charge, and low RDS(on), contributing to efficient power conversion. The device is tested for 100% single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP020N08GHTD
- Package: TO-263
- Channel Type: N-Channel
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Product Summary | |||||||
| V(BR)DSS | 200 | V | |||||
| RDS(on)TYP | @10V | 8.5 | m | ||||
| ID | 120 | A | |||||
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | 200 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 120 | A | |||
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 80 | A | |||
| Pulsed Drain Current | IDM | 480 | A | ||||
| Single Pulse Avalanche Energy | EAS | 1156 | mJ | ||||
| Power Dissipation (Tc=25) | PD | (Tc=25) | 280 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.45 | /W | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ||||
| Operating Junction Temperature Range | TJ | -55 | 150 | ||||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V | |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 1 | A | |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8.5 | 11 | m | |
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 5300 | - | pF | |
| Output Capacitance | Coss | - | 410 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 27 | - | pF | ||
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 78 | - | nC | |
| Gate-Source Charge | Qgs | - | 28 | - | |||
| Gate-Drain Charge | Qgd | - | 17 | - | |||
| Switching Characteristics | |||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 , RG = 6.0 | - | 23 | - | nS | |
| Rise Time | tr | - | 48 | - | |||
| Turn-Off Delay Time | td(off) | - | 63 | - | |||
| Fall Time | tf | - | 19 | - | |||
| Drain-Source Body Diode Characteristics | |||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | - | - | 120 | A | ||
| Body Diode Reverse Recovery Time | Trr | IS = 50A, dIF/dt = 100A/us | - | 128 | - | nS | |
| Body Diode Reverse Recovery Charge | Qrr | - | 643 | - | nC | ||
| Package Information (TO-263) | |||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 | |||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | |||
| B | 1.120 | 1.420 | 0.044 | 0.056 | |||
| b | 0.710 | 0.910 | 0.028 | 0.036 | |||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | |||
| c | 0.310 | 0.530 | 0.012 | 0.021 | |||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | |||
| D | 10.010 | 10.310 | 0.394 | 0.406 | |||
| E | 8.500 | 8.900 | 0.335 | 0.350 | |||
| e | 2.540 TYP. | 0.100 TYP. | |||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | |||
| L | 14.940 | 15.500 | 0.588 | 0.610 | |||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | |||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | |||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | |||
| 0 | 8 | 0 | 8 | ||||
| V | 5.600 REF. | 0.220 REF. | |||||
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