100V N Channel MOSFET SP010N02GHTQ Featuring Low Gate Charge and Fast Switching in TO 220 3L Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP010N02GHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N02GH
- Package Type: TO-220-3L
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 270 | A | |||
| Continuous Drain Current (Tc=100) | ID | 180 | A | |||
| Pulsed Drain Current | IDM | 1080 | A | |||
| Single Pulse Avalanche Energy | EAS | 1560 | mJ | |||
| Power Dissipation (Tc=25) | PD | 260 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.48 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | V | ||
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 | µA | ||
| Gate Leakage Current | IGSS | VGS=±20V , VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 2.8 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | 2.2 | 2.75 | mΩ | |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 13420 | pF | ||
| Output Capacitance | Coss | 2034 | pF | |||
| Reverse Transfer Capacitance | Crss | 48 | pF | |||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | 156 | nC | ||
| Gate-Source Charge | Qgs | 51 | nC | |||
| Gate-Drain Charge | Qg d | 45 | nC | |||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=1.6Ω, ID=125A | 35 | nS | ||
| Rise Time | tr | 68 | nS | |||
| Turn-Off Delay Time | td(off) | 150 | nS | |||
| Fall Time | tf | 105 | nS | |||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 270 | A | |||
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | 106 | nS | ||
| Reverse Recovery Charge | Qrr | 328 | nC |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| Φ | 3.400 | 3.800 | 0.134 | 0.150 |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina