60V N Channel Power MOSFET Siliup SP60N10GDNK Featuring Low On State Resistance and High Reliability
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP60N10GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology for fast switching speeds and enhanced performance. This surface mount device is ideal for demanding applications such as DC-DC converters and motor control, offering a continuous drain current of 35A and a low on-state resistance. It features 100% Single Pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package Type: PDFN5X6-8L
- Certifications: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit | ||
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | 10V | 10 | m | ||
| RDS(on)TYP | RDS(on) | 4.5V | 13 | m | ||
| ID | ID | 35 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | Tc=25C | 35 | A | ||
| Continuous Drain Current (Tc=100C) | ID | Tc=100C | 22 | A | ||
| Pulse Drain Current | IDM | Tested | 105 | A | ||
| Single Pulse Avalanche Energy | EAS | 121 | mJ | |||
| Power Dissipation (Tc=25C) | PD | Tc=25C | 55 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.27 | C/W | |||
| Maximum Junction Temperature | TJ | -55 to 150 | C | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | 1 | uA | |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=15A | - | 10 | 13 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 13 | 18 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=10A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6.2 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 33.8 | - | nS | |
| Fall Time | tf | - | 26.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 35 | A | |
| Reverse Recovery Time | Trr | IS=20 A,di/dt=100 A/sTJ=25 | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
| Package Information (PDFN5x6-8L) | ||||||
| Dimensions (mm) | A | 0.900 - 1.000 | A3 | 0.254 REF. | ||
| Dimensions (mm) | D | 4.944 - 5.096 | E | 5.974 - 6.126 | ||
| Dimensions (mm) | D1 | 1.470 - 1.870 | D2 | 0.470 - 0.870 | ||
| Dimensions (mm) | E1 | 3.375 - 3.575 | D3 | 4.824 - 4.976 | ||
| Dimensions (mm) | E2 | 5.674 - 5.826 | k | 1.190 - 1.390 | ||
| Dimensions (mm) | b | 0.350 - 0.450 | e | 1.270 TYP. | ||
| Dimensions (mm) | L | 0.559 - 0.711 | L1 | 0.424 - 0.576 | ||
| Dimensions (mm) | H | 0.574 - 0.726 | 10 - 12 | |||
Order Information:
- Device: SP60N10GDNK
- Package: PDFN5X6-8L
- Unit/Tape: 5000
Marking: 60N10GD :Device Code, * :Month Code
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