Fast Switching Dual P Channel MOSFET Siliup SP4953ADP8 30V Low Gate Charge for Power Applications
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP4953ADP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a SOP-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 4953
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | -30 | - | - | V |
| RDS(on)TYP | - | -10V | - | 40 | - | m |
| RDS(on)TYP | - | -4.5V | - | 60 | - | m |
| ID | - | - | - | -5.3 | - | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | - | - | -30 | V |
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | - | - | 20 | V |
| Continuous Drain Current | ID | (Ta=25,unless otherwise noted) | - | - | -5.3 | A |
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | - | - | -21.2 | A |
| Power Dissipation | PD | (Ta=25,unless otherwise noted) | - | - | 1.25 | W |
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25,unless otherwise noted) | - | 100 | - | /W |
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4.1A | - | 40 | 55 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3.0A | - | 60 | 85 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 495 | - | pF |
| Output Capacitance | Coss | - | - | 65 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 49 | - | pF |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | - | 1.6 | - | - |
| Gate-Drain Charge | Qgd | - | - | 2.4 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V , RG=3, ID=-1A | - | 8 | - | nS |
| Rise Time | Tr | - | - | 5 | - | - |
| Turn-Off Delay Time | Td(off) | - | - | 27 | - | - |
| Fall Time | Tf | - | - | 12 | - | - |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | -5.3 | A |
| Reverse recover time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 29 | - | nS |
| Reverse recovery charge | Qrr | - | - | 11 | - | nC |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | - | - | - |
| A | - | 1.35 | 1.75 | - | - | - |
| A1 | - | 0.10 | 0.25 | - | - | - |
| A2 | - | 1.35 | 1.55 | - | - | - |
| b | - | 0.33 | 0.51 | - | - | - |
| c | - | 0.17 | 0.25 | - | - | - |
| D | - | 4.80 | 5.00 | - | - | - |
| e | - | 1.27 REF. | - | - | - | - |
| E | - | 5.80 | 6.20 | - | - | - |
| E1 | - | 3.80 | 4.00 | - | - | - |
| L | - | 0.40 | 1.27 | - | - | - |
| - | 0 | 8 | - | - | - | |
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