Fast Switching Speed ROHS Compliant 60V P Channel MOSFET Siliup SP60P25NK with Surface Mount Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60P25NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60P25NK
- Package: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -60 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | -10V | 25 | 35 | m | |
| On-Resistance (Typical) | RDS(on)TYP | -4.5V | 30 | 42 | m | |
| Continuous Drain Current | ID | -35 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -25 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -17 | A | ||
| Pulse Drain Current | IDM | Tested | -100 | A | ||
| Single Pulsed Avalanche Energy | EAS | 1 | 210 | mJ | ||
| Power Dissipation | PD | (Tc=25C) | 50 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.5 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-5A | - | 25 | 35 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-4A | - | 30 | 42 | m |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 2417 | - | pF |
| Output Capacitance | Coss | VDS=-30V , VGS=0V , f=1MHz | - | 179 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-30V , VGS=0V , f=1MHz | - | 120 | - | pF |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 46.5 | - | nC |
| Gate-Source Charge | Qgs | VDS=-30V , VGS=-10V , ID=-6A | - | 9.1 | - | nC |
| Gate-Drain Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 9.2 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=-30V VGS=-10V , RG=3, ID=-6A | - | 9.8 | - | nS |
| Rise Time | Tr | VDD=-30V VGS=-10V , RG=3, ID=-6A | - | 6.1 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=-30V VGS=-10V , RG=3, ID=-6A | - | 44 | - | nS |
| Fall Time | Tf | VDD=-30V VGS=-10V , RG=3, ID=-6A | - | 12.7 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -25 | A | |
| Reverse recover time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 25 | - | nS |
| Reverse recovery charge | Qrr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 55 | - | nC |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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