Fast Switching P Channel MOSFET Siliup SP1613NJ 16V for Power Management and DC DC Converter Circuits
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Product Description
Product Overview
The SP1613NJ is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficiency and performance, this MOSFET features fast switching speeds and low on-resistance, making it ideal for power management applications. It is 100% tested for single pulse avalanche energy, ensuring reliability. Key applications include DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Model: SP1613NJ
- Package: PDFN3X3-8L
- Device Code: Q1613
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -16 | V | |
| On-Resistance (Typ.) | RDS(on)TYP | @-4.5V | 13 | m |
| On-Resistance (Typ.) | RDS(on)TYP | @-2.5V | 16 | m |
| Continuous Drain Current | ID | -20 | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -16 | V | |
| Gate-Source Voltage | VGSS | 12 | V | |
| Continuous Drain Current (Tc=25C) | ID | -20 | A | |
| Continuous Drain Current (Tc=100C) | ID | -13 | A | |
| Pulse Drain Current Tested | IDM | -80 | A | |
| Single Pulse Avalanche Energy | EAS | 39 | mJ | |
| Power Dissipation (Tc=25C) | PD | 23 | W | |
| Thermal Resistance Junction-to-Case | RJC | 5.4 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -16 | V |
| Drain-Source Leakage Current | IDSS | VDS=-12V , VGS=0V , TJ=25 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -0.4 to -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 13 to 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-4A | 16 to 22 | m |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 2050 | pF |
| Output Capacitance | Coss | 411 | pF | |
| Reverse Transfer Capacitance | Crss | 362 | pF | |
| Total Gate Charge | Qg | VDS=-16V , VGS=-10V , ID=-10A | 30 | nC |
| Gate-Source Charge | Qgs | 5.3 | ||
| Gate-Drain Charge | Qg d | 7.6 | ||
| Turn-On Delay Time | Td(on) | VDD=-16V, VGS=-10V ,RG=3, ID=-6A | 14 | nS |
| Rise Time | Tr | 20 | nS | |
| Turn-Off Delay Time | Td(off) | 95 | nS | |
| Fall Time | Tf | 65 | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Package Information (PDFN3X3-8L) | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0 ~ 0.05 | 0 ~ 0.002 | ||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||
| L2 | 0 ~ 0.100 | 0 ~ 0.004 | ||
| L3 | 0 ~ 0.100 | 0 ~ 0.004 | ||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||
| 9 - 13 | 9 - 13 | |||
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