Power Management N Channel MOSFET Siliup SP010N02AGHTO 100V with Fast Switching and Low On Resistance
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Product Description
Product Overview
The SP010N02AGHTO is a 100V N-Channel Power MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Device Code: 010N02AGH
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @10V | 1.3 | m | ||
| Continuous Drain Current | ID | 340 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 340 | A | |||
| Pulsed Drain Current | IDM | 1360 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 558 | mJ | |||
| Total Power Dissipation2 (Tc=25) | PD | 400 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.38 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 2.6 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=125A | 1.3 | 1.65 | m | |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 13531 | pF | ||
| Output Capacitance | Coss | 1889 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF | |||
| Total Gate Charge (4.5V) | Qg | VDS=50V , VGS=10V , ID=125A | 198 | nC | ||
| Gate-Source Charge | Qgs | 51 | nC | |||
| Gate-Drain Charge | Qgd | 37 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V , RG=1.6, ID=125A | 25 | ns | ||
| Rise Time | Tr | 75 | ns | |||
| Turn-Off Delay Time | Td(off) | 89 | ns | |||
| Fall Time | Tf | 29 | ns | |||
| Diode Forward Voltage2 | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| TOLL Package Dimensions (Millimeters) | ||||||
| Dimension | Symbol | Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |||
| b | 0.65 | 0.75 | 0.85 | |||
| C | 0.508 | REF | ||||
| D | 10.25 | 10.40 | 10.55 | |||
| D1 | 2.85 | 3.00 | 3.15 | |||
| E | 9.75 | 9.90 | 10.05 | |||
| E1 | 9.65 | 9.80 | 9.95 | |||
| E2 | 8.95 | 9.10 | 9.25 | |||
| E3 | 7.25 | 7.40 | 7.55 | |||
| e | 1.20 | BSC | ||||
| F | 1.05 | 1.20 | 1.35 | |||
| H | 11.55 | 11.70 | 11.85 | |||
| H1 | 6.03 | 6.18 | 6.33 | |||
| H2 | 6.85 | 7.00 | 7.15 | |||
| H3 | 3.00 | BSC | ||||
| L | 1.55 | 1.70 | 1.85 | |||
| L1 | 0.55 | 0.7 | 0.85 | |||
| L2 | 0.45 | 0.6 | 0.75 | |||
| M | 0.08 | REF. | ||||
| 8 | 10 | 12 | ||||
| K | 4.25 | 4.40 | 4.55 | |||
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