High Current 40 Amp 30 Volt MOSFET Siliup SP30N07TH in TO 252 2L Package for Power Management Circuits

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Product Description

Product Overview

The SP30N07TH is a 30V N-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications. Key applications include PWM applications, load switching, and power management. The MOSFET offers a high current rating and is available in a TO-252-2L package.

Product Attributes

Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Code: 30N07
Package: TO-252-2L
Material: Lead free product

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				30	V
RDS(on)	RDS(on)TYP	@10V		7.5		m
RDS(on)	RDS(on)TYP	@4.5V		10.5		m
Current	ID				40	A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS	(VGS=0V			30	V
Gate-Source Voltage	VGS	(VDS=0V)			20	V
Drain Current-Continuous	ID	(Tc=25)			40	A
Drain Current-Continuous	ID	(Tc=100)			28	A
Drain Current-Continuous@ Current-Pulsed	IDM (pluse)				160	A
Maximum Power Dissipation	PD	(Tc=25)			50	W
Maximum Power Dissipation	PD	(Tc=100)			25	W
Avalanche energy	EAS				90	mJ
Thermal Resistance,Junction-to-Case	RJc				3	/W
Operating Junction and Storage Temperature Range	TJ,TSTG		-55	To	175
Electrical Characteristics (Ta=25, unless otherwise noted)
Static Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250A	30			V
Zero Gate Voltage Drain Current	IDSS	VDS=30V,VGS=0V		1		A
Gate-Body Leakage Current	IGSS	VGS=20V,VDS=0V		100		nA
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250A	1	1.5	2.5	V
Forward Transconductance	gFS	VDS=5V,ID=20A		10	20	S
Drain-Source On-State Resistance	RDS(ON)	VGS=10V, ID=20A		7.5	10	m
Drain-Source On-State Resistance	RDS(ON)	VGS=4.5V, ID=15A		10.5	15	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=15V,VGS=0V, f=1.0MHz		1050		pF
Output Capacitance	Coss			145		pF
Reverse Transfer Capacitance	Crss			120		pF
Gate resistance	Rg	VGS=0V, VDS=0V,f=1.0MHz			2
Switching Times
Turn-on Delay Time	td(on)	VGS=10V, VDS=15V, RL=0.75W,RGEN=3W		7		nS
Turn-on Rise Time	tr			22		nS
Turn-Off Delay Time	td(off)			30		nS
Turn-Off Fall Time	tf			5		nS
Total Gate Charge	Qg	VGS=10V, VDS=25V, ID=12A		22		nC
Gate-Source Charge	Qgs			4		nC
Gate-Drain Charge	Qg d			7		nC
Source-Drain Diode Characteristics
Gate-Drain Charge	VSD	VGS=0V,IS=20A		1.2		V

TO-252-2L Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.