Siliup SP2006KT2 20V P Channel MOSFET Featuring 2KV ESD Protection for Battery Switch and Power Conversion

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Product Description

Product Overview

The SP2006KT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP2006KT2
Package: SOT-23
Circuit Diagram Marking: 06K
ESD Protection: 2KV

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-20			V
RDS(on)		@-4.5V		650		m
		@-2.5V		850		m
Continuous Drain Current	ID				-0.66	A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS		-20			V
Gate-Source Voltage	VGSS			12		V
Continuous Drain Current	ID				-0.66	A
Pulse Drain Current	IDM	Tested			-2.64	A
Power Dissipation	PD				350	mW
Thermal Resistance Junction-to-Ambient	RJA				357	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-20			V
Drain-Source Leakage Current	IDSS	VDS=-16V , VGS=0V			-1	uA
Gate-Source Leakage Current	IGSS	VGS=12V , VDS=0V			10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-0.35	-0.65	-1.00	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-500mA		650	750	m
		VGS=-2.5V , ID=-200mA		850	1000	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=-10V , VGS=0V , f=1MHz		75		pF
Output Capacitance	Coss			20		pF
Reverse Transfer Capacitance	Crss			14		pF
Total Gate Charge	Qg	VDS=-10V , VGS=-4.5V , ID=-0.5A		1.25		nC
Gate-Source Charge	Qgs			0.35
Gate-Drain Charge	Qgd			0.27
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=-10V VGS=-4.5V , RG=3 , RL=2.5		5		nS
Turn-On Rise Time	tr			19
Turn-Off Delay Time	td(off)			15
Turn-Off Fall Time	tf			24
Source-Drain Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			-1.2	V
Package Information (SOT-23)
Symbol	Dimensions In Millimeters	Min.	Max.
A		0.90	1.15
A1		0.00	0.10
A2		0.90	1.05
b		0.30	0.50
c		0.08	0.15
D		2.80	3.00
E		1.20	1.40
E1		2.25	2.55
e		0.95 REF.
e1		1.80	2.00
L		0.55 REF.
L1		0.30	0.50
		0	8
Order Information
Device	Package	Unit/Tape
SP2006KT2	SOT-23	3000