Dual N Channel MOSFET Siliup SP010N70DP8 100V 70mRDSon at 10V and 85mRDSon at 4.5V for power switching
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Product Description
Product Overview
The SP010N70DP8 is a 100V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) with 70m at 10V and 85m at 4.5V. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP010N70DP8
- Channel Type: Dual N-Channel MOSFET
- Package: SOP-8L
- Marking: 10N7D
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on)TYP | @10V | 70 | m | |||
| RDS(on)TYP | @4.5V | 85 | m | |||
| ID | 4 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=2A | - | 70 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | - | 85 | 110 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 1100 | - | pF |
| Output Capacitance | Coss | - | 55 | - | ||
| Reverse Transfer Capacitance | Crss | - | 40 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 12 | - | nC |
| Gate-Source Charge | Qgs | - | 2.9 | - | ||
| Gate-Drain Charge | Qgd | - | 1.8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=3A | - | 3.9 | - | nS |
| Rise Time | Tr | - | 26 | - | ||
| Turn-Off Delay Time | Td(off) | - | 16.2 | - | ||
| Fall Time | Tf | - | 8.9 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | Reference | ||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 | REF. | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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