Low On Resistance N Channel MOSFET Siliup 2N7002KT7 with 60V Drain Source Voltage and ESD Protection
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 2N7002KT7 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This surface mount device features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance of 1.7 at 10V and 1.8 at 4.5V, with a continuous drain current of 300mA.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 2N7002KT7
- Device Code: 72K
- Package Type: SOT-723
- Technology: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 1.7 | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 1.8 | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 300 | mA | ||
| Pulse Drain Current | IDM | (Tested) | 1200 | mA | ||
| Power Dissipation | PD | (Ta=25) | 150 | mW | ||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qg | - | 0.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information | ||||||
| Package | Symbol | Dimensions In Millimeters | Min. | Max. | ||
| SOT-723 | A | 0.430 | 0.500 | |||
| SOT-723 | A1 | 0.000 | 0.050 | |||
| SOT-723 | b | 0.170 | 0.270 | |||
| SOT-723 | b1 | 0.270 | 0.370 | |||
| SOT-723 | c | 0.080 | 0.150 | |||
| SOT-723 | D | 1.150 | 1.250 | |||
| SOT-723 | E | 1.150 | 1.250 | |||
| SOT-723 | E1 | 0.750 | 0.850 | |||
| SOT-723 | e | 0.800TYP. | ||||
| SOT-723 | 7 REF. | |||||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina