Low on resistance Siliup SP60P30NK 60V P Channel MOSFET with surface mount design and ROHS compliance
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP60P30NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring fast switching speeds, a surface mount package, and ROHS compliance, this MOSFET is ideal for applications such as DC-DC converters and motor control. It boasts a low on-resistance and is 100% tested for single pulse avalanche energy, ensuring reliability in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP60P30NK
- Channel Type: P-Channel
- Voltage Rating: 60V
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | - | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-5A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-4A | - | 38 | 50 | m |
| Continuous Drain Current | ID | (Tc=25C) | - | - | -28 | A |
| Continuous Drain Current | ID | (Tc=100C) | - | - | -18 | A |
| Pulse Drain Current | IDM | Tested | - | - | -120 | A |
| Single pulsed avalanche energy | EAS | - | - | 144 | mJ | |
| Power Dissipation | PD | (Tc=25C) | - | - | 50 | W |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | - | 2417 | - | pF |
| Output Capacitance | Coss | - | 179 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 120 | - | pF | |
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-6.2A | - | 46.5 | - | nC |
| Gate-Source Charge | Qgs | - | 9.1 | - | nC | |
| Gate-Drain Charge | Qg d | - | 9.2 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-20V, VGS=-10V , RG=3, ID=-6.2A | - | 9.8 | - | nS |
| Rise Time | Tr | - | 6.1 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 44 | - | nS | |
| Fall Time | Tf | - | 12.7 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -30 | A | |
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | - | 21 | - | nS |
| Reverse recovery charge | Qrr | - | 12 | - | nC |
| Package Information (PDFN5X6-8L) | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | 0.254REF. | 0.010REF. | |||
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270TYP. | 0.050TYP. | |||
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 | 12 | 10 | 12 | ||
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