40V N Channel Power MOSFET Siliup SP40N02AGTH Featuring Split Gate Trench Technology and TO 252 Package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP40N02AGTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low R_DS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a TO-252 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 40N02AG
Package: TO-252
Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V_(BR)DSS	-	-	-	-	40	V
R_DS(on)	-	@10V	-	1.9	2.5	m
R_DS(on)	-	@4.5V	-	3	4	m
ID	-	-	-	-	130	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	-	-	-	40	V
Gate-Source Voltage	VGS	-	-	20	-	V
Continuous Drain Current (Tc=25)	ID	-	-	-	130	A
Continuous Drain Current (Tc=100)	ID	-	-	-	85	A
Pulsed Drain Current	IDM	-	-	-	520	A
Single Pulse Avalanche Energy	EAS	-	-	-	506	mJ
Power Dissipation (Tc=25)	PD	-	-	-	125	W
Thermal Resistance Junction-to-Case	RJC	-	-	-	1	/W
Storage Temperature Range	TSTG	-	-55	-	150
Operating Junction Temperature Range	TJ	-	-55	-	150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain Cut-Off Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.8	2.5	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V , ID=20A	-	1.9	2.5	m
Drain-Source ON Resistance	RDS(ON)	VGS=4.5V , ID=10A	-	3	4	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	3485	-	pF
Output Capacitance	Coss	-	-	1208	-	pF
Reverse Transfer Capacitance	Crss	-	-	59	-	pF
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=85A	-	57	-	nC
Gate-Source Charge	Qgs	-	-	9.5	-	-
Gate-Drain Charge	Qgd	-	-	11	-	-
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=20V, VGS=10V, RG=1.6, ID=85A	-	10	-	nS
Rise Time	tr	-	-	3	-	-
Turn-Off Delay Time	td(off)	-	-	35	-	-
Fall Time	tf	-	-	4	-	-
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS	-	-	-	130	A
Reverse Recovery Time	Trr	IS=40A, di/dt=100A/us, TJ=25	-	42	-	nS
Reverse Recovery Charge	Qrr	-	-	37	-	nC

TO-252 Package Information
Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.	0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.	0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.	0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.	0.211 REF.