Power switching MOSFET Siliup SP3070TH 30V N Channel device tested for single pulse avalanche energy
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Delivery Time:
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Product Description
Product Overview
The SP3070TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on) for optimal performance. The device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP3070TH
- Device Code: 3070
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) Typ. | RDS(on) | @10V | 4.5 | m | ||
| RDS(on) Typ. | RDS(on) | @4.5V | 6.0 | m | ||
| Continuous Drain Current | ID | 70 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current (TC=25) | ID | 70 | A | |||
| Continuous Drain Current (TC=100) | ID | 47 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 132 | mJ | |||
| Power Dissipation (TC=25) | PD | 36 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 4.5 | 6.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=15A | - | 6.0 | 9.0 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1612 | - | pF |
| Output Capacitance | Coss | - | 194 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 163 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 33.1 | - | nC |
| Gate-Source Charge | Qgs | - | 5.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 6.8 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=4.5V , RG=6, ID=15A | - | 6.7 | - | nS |
| Rise Time | Tr | - | 14.5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 32 | - | nS | |
| Fall Time | Tf | - | 8.2 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | Trr | IS=30A, di/dt=100A/us, TJ=25 | - | 32 | - | nS |
| Reverse Recovery Charge | Qrr | - | 12 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Note |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | REF. | |
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | REF. | |
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | REF. | |
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | REF. | |
| TO-252 Package Information (Dimensions in Inches) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Note |
| A | 0.087 | 0.094 | |
| A1 | 0.000 | 0.005 | |
| b | 0.026 | 0.034 | |
| c | 0.018 | 0.023 | |
| D | 0.256 | 0.264 | |
| D1 | 0.201 | 0.215 | |
| D2 | 0.190 | REF. | |
| E | 0.236 | 0.244 | |
| e | 0.086 | 0.094 | |
| L | 0.386 | 0.409 | |
| L1 | 0.114 | REF. | |
| L2 | 0.055 | 0.067 | |
| L3 | 0.063 | REF. | |
| L4 | 0.024 | 0.039 | |
| 0.043 | 0.051 | ||
| 0 | 8 | ||
| h | 0.000 | 0.012 | |
| V | 0.211 | REF. | |
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