N Channel MOSFET SP60N03GHTD 60V 140A Low RDSon TO263 Package Ideal for Power Switching Applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N03GHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N03GHTD
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | ||
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 140 | A | (Tc=25C) | ||
| Continuous Drain Current (Tc=100C) | ID | 95 | A | (Tc=100C) | ||
| Pulse Drain Current | IDM | 560 | A | Tested | ||
| Single Pulse Avalanche Energy | EAS | 784 | mJ | 1 | ||
| Power Dissipation (Tc=25C) | PD | 145 | W | (Tc=25C) | ||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | C/W | |||
| Maximum Junction Temperature | TJ | -55 to 150 | C | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250mA | ||
| Zero Gate Voltage Drain Current | IDSS | - | 1 | uA | VDS=48V, VGS=0V | |
| Gate Leakage Current | IGSS | - | 100 | nA | VGS=20V, VDS=0V | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VDS=VGS, ID=250uA |
| Drain-Source On-state Resistance | RDS(ON) | - | 3.3 | 4.2 | m | VGS=10V, ID=20A |
| Input Capacitance | Ciss | - | 4250 | - | pF | VGS=0V, VDS=30V,F=1MHz |
| Output Capacitance | Coss | - | 975 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 41 | - | pF | |
| Total Gate Charge | Qg | - | 42 | - | nC | VDS=30V, VGS=10V, ID=20A |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Turn-On Delay Time | td(on) | - | 13.5 | - | nS | VDD=30V, ID=20A, VGS=10V, RG=3 |
| Rise Time | tr | - | 96 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Fall Time | tf | - | 115 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | - | 1.2 | V | IS=1A, TJ=25 | |
| Maximum Body-Diode Continuous Current | IS | - | 140 | A | ||
| Reverse Recovery Time | trr | - | 35 | nS | IS=60 A, di/dt=100 A/sTJ=25 | |
| Reverse Recovery Charge | Qrr | - | 30 | nC |
Note 1: The test condition is VDD=30V, VGS=10V, L=0.5mH, RG=25.
Order Information: SP60N03GHTD in TO-263 package, 800 units per tape.
Marking: Device Code: 60N03GH, Week Code: **
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina