Power Management Solution Siliup SP010N02BGHTO 100V N Channel MOSFET with Split Gate Trench Technology

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Product Description

Product Overview

The SP010N02BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low Rdson, making it ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It is tested for 100% single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N02BGHTO
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TOLL

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			100		V
RDS(on)		@10V		1.8		m
ID				260		A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25,unless otherwise noted)			100	V
Gate-Source Voltage	VGS	(Ta=25,unless otherwise noted)		20		V
Continuous Drain Current1	ID	(Tc=25)			260	A
Continuous Drain Current1	ID	(Tc=100)			175	A
Pulsed Drain Current	IDM				1040	A
Single Pulse Avalanche Energy1	EAS				1560	mJ
Power Dissipation	PD	(Tc=25)			280	W
Thermal Resistance Junction-to-Case	RJC				0.45	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	ID = 250A, VGS = 0V	100	110	-	V
Drain Cut-Off Current	IDSS	VDS = 80V, VGS = 0V	-	-	1	A
Gate Leakage Current	IGSS	VGS = 20V, VDS = 0V	-	-	0.1
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	2.7	3.2	4	V
Drain-Source ON Resistance	RDS(ON)	VGS = 10V, ID = 20A	-	1.8	2.2	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS = 50V, VGS = 0V, f = 1.0MHz	-	9625	-	pF
Output Capacitance	Coss		-	1608	-	pF
Reverse Transfer Capacitance	Crss		-	75	-	pF
Total Gate Charge	Qg	VDS = 50V, VGS = 10V, ID=20A	-	160	-	nC
Gate-Source Charge	Qgs		-	31	-
Gate-Drain Charge	Qg		-	37	-
Switching Characteristics
Turn-On Delay Time	td(on)	VGS = 10V, VDS = 50V, RL = 2.5 RG = 6.0	-	35	-	nS
Rise Time	tr		-	68	-
Turn-Off Delay Time	td(off)		-	150	-
Fall Time	tf		-	105	-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V,TJ = 25C	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	260	A
Reverse Recovery Time	Trr	TJ = 25C, IF = 100A, di/dt = 100A/us	-	97	-	nS
Reverse Recovery Charge	Qrr		-	228	-	nC
Package Information (TOLL)
Symbol	Dimensions (mm)	Min.	Nom.	Max.
A		2.20	2.30	2.40
b		0.65	0.75	0.85
C		0.508
D		10.25	10.40	10.55
D1		2.85	3.00	3.15
E		9.75	9.90	10.05
E1		9.65	9.80	9.95
E2		8.95	9.10	9.25
E3		7.25	7.40	7.55
e			1.20	BSC
F		1.05	1.20	1.35
H		11.55	11.70	11.85
H1		6.03	6.18	6.33
H2		6.85	7.00	7.15
H3			3.00	BSC
L		1.55	1.70	1.85
L1		0.55	0.7	0.85
L2		0.45	0.6	0.75
M			0.08	REF.
		8	10	12
K		4.25	4.40	4.55