Power Switching MOSFET Siliup SP010N03AGHTF 100V N Channel with Low RDSon and High Current Capacity
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP010N03AGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications, DC-DC converters, and power management systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N03AGH
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100V | V | ||||
| RDS(on)TYP | @10V | 2.6m | ||||
| ID | 220A | |||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current (Tc=25) | ID | (Ta=25,unless otherwise noted) | 220 | A | ||
| Continuous Drain Current (Tc=100) | ID | (Ta=25,unless otherwise noted) | 150 | A | ||
| Pulsed Drain Current | IDM | (Ta=25,unless otherwise noted) | 880 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25,unless otherwise noted) | 1332 | mJ | ||
| Power Dissipation (Tc=25) | PD | (Ta=25,unless otherwise noted) | 245 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25,unless otherwise noted) | 0.51 | /W | ||
| Storage Temperature Range | TSTG | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Operating Junction Temperature Range | TJ | (Ta=25,unless otherwise noted) | -55 | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 2.6 | 3.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 7162 | - | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | - | 1067 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=125A | - | 47 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=125A | - | 23 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=6, ID=125A | - | 26 | - | nS |
| Rise Time | tr | VDD=50V, VGS=10V , RG=6, ID=125A | - | 75 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, VGS=10V , RG=6, ID=125A | - | 87 | - | nS |
| Fall Time | tf | VDD=50V, VGS=10V , RG=6, ID=125A | - | 30 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | IS = 1A, VGS = 0V | - | - | 220 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 75 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 210 | - | nC |
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
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