power management solution featuring Siliup SP40N08NK 40V N Channel MOSFET with fast switching speeds

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Product Description

Product Overview

The SP40N08NK is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, a surface mount PDFN5X6-8L package, and is ROHS Compliant & Halogen-Free. The device is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters and motor control applications.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP40N08NK
Technology: N-Channel MOSFET
Compliance: ROHS Compliant & Halogen-Free
Testing: 100% Single Pulse avalanche energy Test
Package Type: PDFN5X6-8L
Device Code: 40N08

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			40		V
RDS(on)		@10V		8		m
RDS(on)		@4.5V		11		m
Continuous Drain Current	ID			50		A
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	(Ta=25)			40	V
Gate-Source Voltage	VGSS	(Ta=25)			20	V
Continuous Drain Current	ID	(Tc=25C)			50	A
Continuous Drain Current	ID	(Tc=100C)			33	A
Pulse Drain Current Tested	IDM				200	A
Single pulsed avalanche energy	EAS				51	mJ
Power Dissipation	PD	(Tc=25C)			35	W
Thermal Resistance Junction-to-Case	RJC				3.6	C/W
Storage Temperature Range	TSTG		-55		150	C
Operating Junction Temperature Range	TJ		-55		150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =12A	-	8	12	m
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =6A	-	11	18	m
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	1785	-	pF
Output Capacitance	Coss		-	210	-	pF
Reverse Transfer Capacitance	Crss		-	158	-	pF
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=10A	-	31	-	nC
Gate-Source Charge	Qgs		-	4	-	nC
Gate-Drain Charge	Qg d		-	11	-	nC
Turn-On Delay Time	Td(on)	VDD=20V ,VGS=10V , RG=3, ID=10A	-	6	-	nS
Rise Time	Tr		-	16	-	nS
Turn-Off Delay Time	Td(off)		-	31	-	nS
Fall Time	Tf		-	15	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	50	A
Reverse recover time	Trr	IS=10A, di/dt=100A/us, TJ=25	-	31	-	nS
Reverse recovery charge	Qrr		-	23	-	nC
Package Dimensions (PDFN5X6-8L)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	0.900	1.000	0.035	0.039
A3	0.254REF.	0.010REF.
D	4.944	5.096	0.195	0.201
E	5.974	6.126	0.235	0.241
D1	3.910	4.110	0.154	0.162
E1	3.375	3.575	0.133	0.141
D2	4.824	4.976	0.190	0.196
E2	5.674	5.826	0.223	0.229
k	1.190	1.390	0.047	0.055
b	0.350	0.450	0.014	0.018
e	1.270TYP.	0.050TYP.
L	0.559	0.711	0.022	0.028
L1	0.424	0.576	0.017	0.023
H	0.574	0.726	0.023	0.029
	10	12	10	12