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100V N Channel MOSFET Siliup SP010N08GTH with Fast Switching Speeds and Low Drain Source Resistance

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Product Description

Product Overview

The SP010N08GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for power switching applications, battery management systems, and uninterruptible power supplies. The device is available in a TO-252 package and has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N08GTH
  • Package: TO-252
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
Drain-Source ON Resistance RDS(on) 10V 8.5 m
Drain-Source ON Resistance RDS(on) 4.5V 11 m
Continuous Drain Current ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 100 V
Gate-Source Voltage VGS (Ta=25 unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25) 65 A
Continuous Drain Current ID (Tc=100) 45 A
Pulsed Drain Current IDM 260 A
Single Pulse Avalanche Energy EAS 156 mJ
Power Dissipation PD (Tc=25) 95 W
Thermal Resistance Junction-to-Case RJC 1.32 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.2 1.9 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 8.5 12 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 15A - 11 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1635 - pF
Output Capacitance Coss - 339 - pF
Reverse Transfer Capacitance Crss - 22 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 14 - nC
Gate-Source Charge Qgs - 5 - nC
Gate-Drain Charge Qg - 7 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS =50V, ID=50A RG = 4.7 - 8 - nS
Rise Time tr - 16 - nS
Turn-Off Delay Time td(off) - 31 - nS
Fall Time tf - 27 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 65 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 49 - nS
Reverse Recovery Charge Qrr - 78 - nC

Order Information

Device Package Unit/Tube Marking
SP010N08GTH TO-252 2500 010N08G : Product code
**: Week code

Package Information (TO-252)

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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