Power MOSFET SP011N03AGHTF 110V N Channel with Low Rdson and High Continuous Drain Current in TO 247
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP011N03AGHTF is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, this MOSFET offers fast switching speeds, low gate charge, and low Rdson. It is ideal for power switching applications, DC-DC converters, and power management systems. The product is tested with 100% single pulse avalanche energy testing and is supplied in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N03AGHTF
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 110 | V | |||
| RDS(on) Typ | @10V | 2.9 | m | |||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 110 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 220 | A | |||
| Continuous Drain Current (Tc=100) | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1260 | mJ | |||
| Power Dissipation (Tc=25) | PD | 245 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.51 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 110 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V, VGS=0V, TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 2.9 | 3.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 6190 | - | pF |
| Output Capacitance | Coss | - | 1002 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 33 | - | pF | |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=125A | - | 136.5 | - | nC |
| Gate-Source Charge | Qgs | - | 46 | - | ||
| Gate-Drain Charge | Qgd | - | 23 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V, RG=6, ID=125A | - | 22.5 | - | nS |
| Rise Time | tr | - | 65 | - | ||
| Turn-Off Delay Time | td(off) | - | 75 | - | ||
| Fall Time | tf | - | 26 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 88 | - | nS |
| Reverse Recovery Charge | Qrr | - | 195 | - | nC | |
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
Package Outline Dimensions (TO-247):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
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