Complementary MOSFET Device Siliup SP4606BCP8 with 30V Drain Source Voltage Lead Free Surface Mount
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Product Description
Product Overview
The SP4606BCP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Lead Status: Lead-free product acquired
- Package Type: Surface mount
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Value | P-Channel Conditions | P-Channel Value | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 30V | -30V | V | ||
| VGS=0V , ID=250uA | 30 | VGS=0V , ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | 20V | 20V | V | ||
| V | ||||||
| Continuous Drain Current | ID | 6A | -5A | A | ||
| VGS=10V | VGS=-10V | A | ||||
| Pulsed Drain Current | IDM | 24A | -20A | A | ||
| A | ||||||
| Single Pulse Avalanche Energy | EAS | 10.5 mJ | 19 mJ | mJ | ||
| VDD=15V,VGS=10V,L=0.5mH,RG=25 | VDD=-15V,VGS=-10V,L=0.5mH,RG=25 | mJ | ||||
| Power Dissipation | PD | 2 W | ||||
| Thermal Resistance Junction-to-Ambient | RJC | 62.5 /W | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | VGS=0V , ID=-250uA | -30 | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | 1 uA | VDS=-24V , VGS=0V , TJ=25 | -1 uA | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 nA | VGS=20V , VDS=0V | 100 nA | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 - 2.2 | VGS=VDS , ID =-250uA | -1 - -3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=1A | 16 - 20 m | VGS=-10V , ID=-4.1A | 40 - 50 m | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | 24 - 32 m | VGS=-4.5V , ID=-3A | 60 - 80 m | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 416 pF | VDS=-15V , VGS=0V , f=1MHz | 501 pF | pF |
| Output Capacitance | Coss | 62 pF | 72 pF | pF | ||
| Reverse Transfer Capacitance | Crss | 51 pF | 57 pF | pF | ||
| Total Gate Charge | Qg | VDS=20V , VGS=4.5V , ID=6A | 5 nC | VDS=-15V , VGS=-10V , ID=-5A | 9 nC | nC |
| Gate-Source Charge | Qgs | 1.11 nC | 1.5 nC | nC | ||
| Gate-Drain Charge | Qgd | 2.61 nC | 2.3 nC | nC | ||
| Turn-On Delay Time | Td(on) | VDD=12V, VGS=10V , RG=3, ID=6A | 7.7 nS | VDD=-15V, VGS=-10V , RG=3, ID=-1A | 8.6 nS | nS |
| Rise Time | Tr | 46 nS | 5.0 nS | nS | ||
| Turn-Off Delay Time | Td(off) | 11 nS | 28.2 nS | nS | ||
| Fall Time | Tf | 3.6 nS | 13.5 nS | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 V | VGS=0V , IS=-1A , TJ=25 | -1.2 V | V |
| Maximum Body-Diode Continuous Current | IS | 6 A | -5 A | A | ||
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, Tj=25 | 18 nS | IS=-5A, di/dt=100A/us, Tj=25 | 31 nS | nS |
| Reverse Recovery Charge | Qrr | 2 nC | 10 nC | nC | ||
Package Information (SOP-8L)
| Symbol | Dimensions In Millimeters (Min.) | Dimensions In Millimeters (Max.) |
|---|---|---|
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.35 | 1.55 |
| b | 0.33 | 0.51 |
| c | 0.17 | 0.25 |
| D | 4.80 | 5.00 |
| e | 1.27 REF. | |
| E | 5.80 | 6.20 |
| E1 | 3.80 | 4.00 |
| L | 0.40 | 1.27 |
| 0 | 8 | |
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