Low RDS on Siliup SP40N11TH 40V N Channel MOSFET designed for switching in power management systems
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Product Description
Product Overview
The SP40N11TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on) at various gate voltages (11m @ 10V, 14m @ 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N11
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 11 | 14 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 14 | 20 | m | |
| ID | ID | (TC=25) | 35 | A | ||
| ID | ID | (TC=100) | 23 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 40 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 35 | A | ||
| Continuous Drain Current | ID | (TC=100) | 23 | A | ||
| Pulsed Drain Current | IDM | 140 | A | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Power Dissipation | PD | (TC=25) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 11 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=4A | - | 14 | 20 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | - | 109 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5.3 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 5.5 | - | nS |
| Rise Time | Tr | - | 14 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 24 | - | nS | |
| Fall Time | Tf | - | 12 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 35 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 5 | - | nC | |
| TO-252 Package Dimensions (mm) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | ||
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