Siliup SP40N04GNJ Power MOSFET 40V N Channel with Low Rdson and High Single Pulse Avalanche Energy Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N04GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge and Rdson, and utilizes Advanced Split Gate Trench Technology. The device is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP40N04GNJ
- Package: PDFN3X3-8L
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 4.5 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 6.2 | m | ||
| ID | ID | 48 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | 40 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 48 | A | |||
| Continuous Drain Current | ID | (Tc=100C) | 32 | A | ||
| Pulse Drain Current Tested | IDM | 192 | A | |||
| Single pulsed avalanche energy | EAS | 110 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 48 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 4.5 | 5.3 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =10A | - | 6.2 | 8.0 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 885 | - | pF |
| Output Capacitance | Coss | - | 478 | - | ||
| Reverse Transfer Capacitance | Crss | - | 12.1 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | - | 6.4 | - | ||
| Gate-Drain Charge | Qg d | - | 3.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20 VGS=10V , RG=3, ID=30A | - | 8 | - | nS |
| Rise Time | Tr | - | 5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 3.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 48 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 14 | - | nS |
| Reverse recovery charge | Qrr | - | 16 | - | nC | |
Note: EAS Test condition is VDD=20V,VGS =10V,L = 0.5mH, Rg=25.
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N04GNJ | PDFN3X3-8L | 5000 |
Circuit Diagram: (Not provided in source text)
Marking: SP40N04GNJ :Device Code ** :Week Code
Package Information (PDFN3X3-8L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 | REF. | 0.006 | REF. |
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
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