20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP2006KT5 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a surface mount package and ESD protection of 2KV. This MOSFET is ideal for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP2006KT5
- Channel Type: P-Channel
- Voltage Rating: 20V
- Package: SOT-523
- ESD Protection: 2KV
- Device Code: 06K
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |
| Static Drain-Source On-Resistance | RDS(on)TYP | @-4.5V | 650 | m |
| @-2.5V | 850 | m | ||
| Continuous Drain Current | ID | -0.66 | A | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||
| Drain-Source Voltage | VDSS | -20 | V | |
| Gate-Source Voltage | VGSS | 12 | V | |
| Continuous Drain Current | ID | -0.66 | A | |
| Pulse Drain Current | IDM | Tested | -2.64 | A |
| Power Dissipation | PD | 150 | mW | |
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Operating Junction Temperature Range | TJ | -55 to 150 | C | |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | -1 uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | 10 uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 to -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 650 to 750 | m |
| VGS=-2.5V , ID=-200mA | 850 to 1000 | m | ||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 75 | pF |
| Output Capacitance | Coss | 20 | ||
| Reverse Transfer Capacitance | Crss | 14 | ||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-0.5A | 1.25 | nC |
| Gate-Source Charge | Qgs | 0.35 | ||
| Gate-Drain Charge | Qg | 0.27 | ||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS |
| Turn-On Rise Time | tr | 19 | ||
| Turn-Off Delay Time | td(off) | 15 | ||
| Turn-Off Fall Time | tf | 24 | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
| Package Information (SOT-523) | ||||
| Dimension Symbol | Min | Max | Unit | |
| A | 0.700 | 0.900 | mm | |
| A1 | 0.000 | 0.100 | mm | |
| A2 | 0.700 | 0.800 | mm | |
| b1 | 0.150 | 0.250 | mm | |
| b2 | 0.250 | 0.350 | mm | |
| C | 0.100 | 0.200 | mm | |
| D | 1.500 | 1.700 | mm | |
| E | 0.700 | 0.900 | mm | |
| E1 | 1.450 | 1.750 | mm | |
| e | 0.500 | TYP | mm | |
| e1 | 0.900 | 1.100 | mm | |
| L | 0.400 | REF | mm | |
| L1 | 0.260 | 0.460 | mm | |
| 0 | 8 | |||
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